IEEE Electron Device Letters · 2005 · 130 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice ReliabilitySemiconductor Device MaterialsSemiconductor ReliabilityWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsCurrent CollapseDevice DegradationElectrical PropertiesHigh-electron-mobility TransistorsMicrowave DevicesPassivationPassivation TechniquesPlasma Treatment
A passivation method has been developed which reduces the degradation of AlGaN-GaN high electron mobility transistor (HEMT) electrical properties caused by extended dc bias or microwave power operation. The key aspect of this passivation technique is exposure to a low-power NH/sub 3/ plasma prior to SiN deposition. Devices fabricated with the NH/sub 3/ treatment prior to SiN passivation show minimal gate lag and current collapse after extended dc bias operation. In addition, the rate of degradation of the microwave power output while under continuous microwave operation is improved by at least 100 times as compared to SiN passivated HEMTs that were not treated with the NH/sub 3/ plasma.
10
30-W/mm GaN HEMTs by Field Plate Optimization
Yifeng Wu, A. Saxler, M. Moore et al. · IEEE Electron Device Letters · 2004 · 1.1K citations
Trapping effects in GaN and SiC microwave FETs
S.C. Binari, P. B. Klein, T.E. Kazior · Proceedings of the IEEE · 2002 · 454 citations
Hydrogen passivation of deep levels in n–GaN
A. Hierro, Steven A. Ringel, M. Hansen et al. · Applied Physics Letters · 2000 · 139 citations