Shinya Ootomo

Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric

Tamotsu Hashizume, Shinya Ootomo, Hideki Hasegawa · Applied Physics Letters · 2003 · 255 citations · Full text

Wide-bandgap Semiconductor, Ultrathin Al2o3 Dielectric, Electrical Engineering +13

Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors

Tamotsu Hashizume, Shinya Ootomo, Takanori Inagaki et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2003 · 224 citations · Full text

Wide-bandgap Semiconductor, Aluminium Nitride, Engineering +18

Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors

Hideki Hasegawa, Takanori Inagaki, Shinya Ootomo et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2003 · 222 citations · Full text

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures

Tamotsu Hashizume, Shinya Ootomo, Susumu Oyama et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2001 · 155 citations · Full text

Materials Science, Semiconductors, Electrical Engineering +14

Over 100A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage

Hiroshi Kambayashi, Yoshihiro Sato, Shinya Ootomo et al. · Solid-State Electronics · 2010 · 149 citations

Wide-bandgap Semiconductor, Electrical Engineering, Si Substrate +7