Susumu Oyama

Mechanism of anomalous current transport in <i>n</i>-type GaN Schottky contacts

Hideki Hasegawa, Susumu Oyama · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2002 · 167 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +13

Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures

Tamotsu Hashizume, Shinya Ootomo, Susumu Oyama et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2001 · 155 citations · Full text

Materials Science, Semiconductors, Electrical Engineering +14

Mechanism of current leakage through metal/n-GaN interfaces

Susumu Oyama, Tamotsu Hashizume, Hideki Hasegawa · Applied Surface Science · 2002 · 78 citations

Electrical Engineering, Engineering, Current Leakage +4

X-ray photoelectron spectroscopy characterization of AlGaN surfaces exposed to air and treated in NH4OH solution

Tamotsu Hashizume, Shinya Ootomo, R. Nakasaki et al. · Applied Physics Letters · 2000 · 37 citations

Materials Science, Aluminium Nitride, Chemical Engineering +14

Surface characterization of GaN and AlGaN layers grown by MOVPE

Tamotsu Hashizume, R. Nakasaki, Shinya Ootomo et al. · Materials Science and Engineering B · 2001 · 23 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +6