R. Nakasaki

Stress–Strain Relationship, Critical Strain (Stress) and Irreversible Strain (Stress) of IBAD-MOCVD-Based 2G HTS Wires Under Uniaxial Tension

Yifei Zhang, D.W. Hazelton, Rodney E Kelley et al. · IEEE Transactions on Applied Superconductivity · 2016 · 102 citations

Materials Science, Stress–strain Relationship, Electrical Engineering +14

2G HTS wires made on 30<i>μ</i>m thick Hastelloy substrate

A. Sundaram, Yifei Zhang, A. Knoll et al. · Superconductor Science and Technology · 2016 · 93 citations

Materials Science, Superconducting Material, Electrical Engineering +15

Insulator-GaN interface structures formed by plasma-assisted chemical vapor deposition

R. Nakasaki, Tamotsu Hashizume, Hideki Hasegawa · Physica E Low-dimensional Systems and Nanostructures · 2000 · 42 citations

Electrical Engineering, Engineering, Applied Physics +5

X-ray photoelectron spectroscopy characterization of AlGaN surfaces exposed to air and treated in NH4OH solution

Tamotsu Hashizume, Shinya Ootomo, R. Nakasaki et al. · Applied Physics Letters · 2000 · 37 citations

Materials Science, Aluminium Nitride, Chemical Engineering +14

Mapping of dopant concentration in a GaAs semiconductor by off-axis phase-shifting electron holography

Hirokazu Sasaki, Kazuo Yamamoto, Tsukasa Hirayama et al. · Applied Physics Letters · 2006 · 28 citations

Semiconductors, Gaas Semiconductor, Electrical Engineering +14