Hiroshi Kambayashi

GaN Power Transistors on Si Substrates for Switching Applications

Nariaki Ikeda, Yuki Niiyama, Hiroshi Kambayashi et al. · Proceedings of the IEEE · 2010 · 516 citations

Electrical Engineering, Engineering, Power Device +11

Over 100A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage

Hiroshi Kambayashi, Yoshihiro Sato, Shinya Ootomo et al. · Solid-State Electronics · 2010 · 149 citations

Wide-bandgap Semiconductor, Electrical Engineering, Si Substrate +7

Normally Off n-Channel GaN MOSFETs on Si Substrates Using an SAG Technique and Ion Implantation

Hiroshi Kambayashi, Yuki Niiyama, Shinya Ootomo et al. · IEEE Electron Device Letters · 2007 · 60 citations

Wide-bandgap Semiconductor, Electrical Engineering, Ion Implantation +11

High-temperature enhancement mode operation of n-channel GaN MOSFETs on sapphire substrates

Takehiko Nomura, Hiroshi Kambayashi, Yuki Niiyama et al. · Solid-State Electronics · 2007 · 43 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +4

High Quality SiO₂/Al₂O₃ Gate Stack for GaN Metal–Oxide–Semiconductor Field-Effect Transistor

Hiroshi Kambayashi, Takehiko Nomura, H. Ueda et al. · Japanese Journal of Applied Physics · 2013 · 41 citations

Semiconductors, Oxide Heterostructures, Electrical Engineering +10