Takehiko Nomura

GaN Power Transistors on Si Substrates for Switching Applications

Nariaki Ikeda, Yuki Niiyama, Hiroshi Kambayashi et al. · Proceedings of the IEEE · 2010 · 522 citations

Engineering, Electrical Engineering, Materials Science +17

Over 100A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage

Hiroshi Kambayashi, Yoshihiro Sato, Shinya Ootomo et al. · Solid-State Electronics · 2010 · 150 citations

Engineering, Electrical Engineering, Materials Science +16

Normally Off n-Channel GaN MOSFETs on Si Substrates Using an SAG Technique and Ion Implantation

Hiroshi Kambayashi, Yuki Niiyama, Shinya Ootomo et al. · IEEE Electron Device Letters · 2007 · 61 citations

Engineering, Electrical Engineering, Materials Science +16

High-temperature enhancement mode operation of n-channel GaN MOSFETs on sapphire substrates

Takehiko Nomura, Hiroshi Kambayashi, Yuki Niiyama et al. · Solid-State Electronics · 2007 · 47 citations

Engineering, Electrical Engineering, Materials Science +14

High Quality SiO₂/Al₂O₃ Gate Stack for GaN Metal–Oxide–Semiconductor Field-Effect Transistor

Hiroshi Kambayashi, Takehiko Nomura, H. Ueda et al. · Japanese Journal of Applied Physics · 2013 · 42 citations

Engineering, Electrical Engineering, Materials Science +17