Over 100A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage - Concepedia

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Over 100A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage

149

Citations

21

References

2010

Year

Hiroshi Kambayashi, Yoshihiro Sato, Shinya Ootomo, Takuya Kokawa, Takehiko Nomura, Sadahiro Kato, T. P. Chow

Solid-State Electronics

Wide-bandgap SemiconductorElectrical EngineeringSi SubstrateEngineeringAlgan/gan Hybrid Mos-hfetApplied PhysicsAluminum Gallium NitrideHigh-breakdown VoltageGan Power DeviceCategoryiii-v Semiconductor

References

	Year	Citations

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