Takuya Kokawa

Over 100A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage

Hiroshi Kambayashi, Yoshihiro Sato, Shinya Ootomo et al. · Solid-State Electronics · 2010 · 149 citations

Wide-bandgap Semiconductor, Electrical Engineering, Si Substrate +7

Liquid-phase sensors using open-gate AlGaN∕GaN high electron mobility transistor structure

Takuya Kokawa, Taketomo Sato, Hideki Hasegawa et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2006 · 61 citations · Full text

Engineering, Chemistry, Polar Liquids +18

High field-effect mobility normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate by selective area growth technique

Hiroshi Kambayashi, Yoshihiro Sato, Takuya Kokawa et al. · Solid-State Electronics · 2010 · 40 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +8

Over 1.7 kV normally-off GaN hybrid MOS-HFETs with a lower on-resistance on a Si substrate

Nariaki Ikeda, Ryosuke Tamura, Takuya Kokawa et al. · 2011 · 36 citations

Wide-bandgap Semiconductor, Electrical Engineering, Si Substrate +12

High-power AlGaN/GaN MIS-HFETs with field-plates on Si substrates

Nariaki Ikeda, Shusuke Kaya, Li Jiang et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 2009 · 31 citations

Semiconductor Technology, Electrical Engineering, Semiconductor Device +13