Takuya Kokawa - Concepedia

Author

Takuya Kokawa

Furukawa Electric (Japan)

Also Known As

Takuya KOKAWA, Takuya Kokawa

Publications

365

Citations

H-Index

Concepts

All Affiliations

Furukawa Electric (Japan)Rensselaer Polytechnic Institute

About

Takuya Kokawa is an author at Furukawa Electric (Japan) specializing in electrical engineering, engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	348
2	Applied Physics	7	7	348
3	Electrical Engineering	7	7	348
4	Chemical Engineering	1	1	61
5	Chemistry	1	1	61

Takuya Kokawa

Publications

348

Citations

H-Index

Page 1

	Year	Citations
Over 100A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage Hiroshi Kambayashi, Yoshihiro Sato, Shinya Ootomo, Solid-State Electronics Wide-bandgap SemiconductorElectrical EngineeringSi SubstrateEngineeringAlgan/gan Hybrid Mos-hfet	2010	149
Liquid-phase sensors using open-gate AlGaN∕GaN high electron mobility transistor structure Takuya Kokawa, Taketomo Sato, Hideki Hasegawa, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena EngineeringChemistryPolar LiquidsCharge TransportSensor Technology	2006	61
High field-effect mobility normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate by selective area growth technique Hiroshi Kambayashi, Yoshihiro Sato, Takuya Kokawa, Solid-State Electronics Materials EngineeringWide-bandgap SemiconductorElectrical EngineeringSi SubstrateEngineering	2010	40
Over 1.7 kV normally-off GaN hybrid MOS-HFETs with a lower on-resistance on a Si substrate Nariaki Ikeda, Ryosuke Tamura, Takuya Kokawa, Wide-bandgap SemiconductorElectrical EngineeringSi SubstrateEngineeringBarrier Layer	2011	36
High-power AlGaN/GaN MIS-HFETs with field-plates on Si substrates Nariaki Ikeda, Shusuke Kaya, Li Jiang, IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs Semiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineeringGan-based Mis-hfet Devices	2009	31
Enhancement-mode GaN hybrid MOS-HFETs on Si substrates with Over 70 A operation Hiroshi Kambayashi, Yoshihiro Sato, Yuki Niiyama, IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs Wide-bandgap SemiconductorEngineeringPower ElectronicsBreakdown VoltageSemiconductor Device	2009	20
High-power AlGaN/GaN HFETs on Si substrates Nariaki Ikeda, Shusuke Kaya, Jiang Li, Semiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineeringHigh-power Algan/gan Hfets	2010	11

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