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High field-effect mobility normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate by selective area growth technique

Materials EngineeringWide-bandgap SemiconductorElectrical EngineeringSi SubstrateEngineeringAlgan/gan Hybrid Mos-hfetApplied PhysicsAluminum Gallium NitrideGan Power DeviceHigh Field-effect MobilitySemiconductor Device