Sadahiro Kato

GaN Power Transistors on Si Substrates for Switching Applications

Nariaki Ikeda, Yuki Niiyama, Hiroshi Kambayashi et al. · Proceedings of the IEEE · 2010 · 522 citations

Engineering, Electrical Engineering, Materials Science +17

Over 100A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage

Hiroshi Kambayashi, Yoshihiro Sato, Shinya Ootomo et al. · Solid-State Electronics · 2010 · 150 citations

Engineering, Electrical Engineering, Materials Science +16

C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE

Sadahiro Kato, Yoshihiro Sato, Hiroshi Sasaki et al. · Journal of Crystal Growth · 2006 · 136 citations

Engineering, Electrical Engineering, Materials Science +15

High power AlGaN/GaN HFET with a high breakdown voltage of over 1.8 kV on 4 inch Si substrates and the suppression of current collapse

Nariaki Ikeda, Syuusuke Kaya, Li Jiang et al. · 2008 · 111 citations

Engineering, Electrical Engineering, Materials Science +17

Normally Off n-Channel GaN MOSFETs on Si Substrates Using an SAG Technique and Ion Implantation

Hiroshi Kambayashi, Yuki Niiyama, Shinya Ootomo et al. · IEEE Electron Device Letters · 2007 · 61 citations

Engineering, Electrical Engineering, Materials Science +16