C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE

Atomic geometry and electronic structure of native defects in GaN

Jörg Neugebauer, Chris G. Van de Walle · Physical review. B, Condensed matter · 1994 · 785 citations

Natural Sciences, Materials Science, Physics +17

Wide bandgap compound semiconductors for superior high-voltage unipolar power devices

T. Paul Chow, R. Tyagi · IEEE Transactions on Electron Devices · 1994 · 483 citations

Engineering, Electrical Engineering, Materials Science +14

High breakdown GaN HEMT with overlapping gate structure

N.-Q. Zhang, S. Keller, Giacinta Parish et al. · IEEE Electron Device Letters · 2000 · 308 citations

Engineering, Electrical Engineering, Materials Science +17

Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates

Julia W. P. Hsu, Michael J. Manfra, R. J. Molnar et al. · Applied Physics Letters · 2002 · 300 citations

Engineering, Materials Engineering, Materials Science +17

Ultraviolet and violet GaN light emitting diodes on silicon

Supratik Guha, N. A. Bojarczuk · Applied Physics Letters · 1998 · 290 citations

Engineering, Materials Engineering, Materials Science +17