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C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE

Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsAluminum Gallium NitrideGan Power Device4-In Si SubstratesPower ElectronicsMicroelectronicsHigh Breakdown Voltages