Seikoh Yoshida - Concepedia

Author

Seikoh Yoshida

Furukawa Electric (Japan)

Also Known As

S. Yoshida, Seikoh YOSHIDA, Seikoh Yoshida, Seikoh Yoshida Seikoh Yoshida, Shinaya Yoshida

113

Publications

1.9K

Citations

H-Index

Concepts

All Affiliations

Furukawa Electric (Japan)Furukawa Electric (United Kingdom)Chiba University

About

Seikoh Yoshida is an author at Furukawa Electric (Japan) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	21	38	1.7K
2	Applied Physics	20	35	1.7K
3	Electrical Engineering	19	29	1.6K
4	Chemistry	3	3	53
5	Chemical Engineering	2	2	29

Seikoh Yoshida

Publications

1.7K

Citations

H-Index

Page 1

	Year	Citations
GaN Power Transistors on Si Substrates for Switching Applications Nariaki Ikeda, Yuki Niiyama, Hiroshi Kambayashi, Proceedings of the IEEE Electrical EngineeringEngineeringPower DeviceNanoelectronicsSi Substrates	2010	516
C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE Sadahiro Kato, Yoshihiro Sato, Hiroshi Sasaki, Journal of Crystal Growth Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringEngineeringApplied Physics	2006	134
High power AlGaN/GaN HFET with a high breakdown voltage of over 1.8 kV on 4 inch Si substrates and the suppression of current collapse Nariaki Ikeda, Syuusuke Kaya, Li Jiang, Wide-bandgap SemiconductorElectrical EngineeringInch Si SubstratesEngineeringNanoelectronics	2008	111
A high-power AlGaN/GaN heterojunction field-effect transistor Seikoh Yoshida, Hirotatsu Ishii, Jiang Li, Solid-State Electronics Electrical EngineeringEngineeringApplied PhysicsAluminum Gallium NitrideGan Power Device	2003	83
High-temperature reliability of GaN metal semiconductor field-effect transistor and bipolar junction transistor Seikoh Yoshida, Joe Suzuki Journal of Applied Physics Gan MesfetSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorEngineering	1999	70
Characterization of a GaN Bipolar Junction Transistor after Operation at 300 for over 300 h Seikoh Yoshida, Joe Suzuki Japanese Journal of Applied Physics Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringEngineeringGan Bjt	1999	61
Normally Off n-Channel GaN MOSFETs on Si Substrates Using an SAG Technique and Ion Implantation Hiroshi Kambayashi, Yuki Niiyama, Shinya Ootomo, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringIon ImplantationEngineeringSi Substrates	2007	60
Reliability of GaN Metal Semiconductor Field-Effect Transistor at High Temperature Seikoh Yoshida, Joe Suzuki Japanese Journal of Applied Physics ReliabilityGan MesfetElectrical EngineeringWide-bandgap SemiconductorEngineering	1998	57
Reliability of metal semiconductor field-effect transistor using GaN at high temperature Seikoh Yoshida, Joe Suzuki Journal of Applied Physics Gan MesfetWide-bandgap SemiconductorElectrical EngineeringEngineeringApplied Physics	1998	43
High-temperature enhancement mode operation of n-channel GaN MOSFETs on sapphire substrates Takehiko Nomura, Hiroshi Kambayashi, Yuki Niiyama, Solid-State Electronics Wide-bandgap SemiconductorElectrical EngineeringEngineeringSapphire SubstratesApplied Physics	2007	43

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