Seikoh Yoshida

GaN Power Transistors on Si Substrates for Switching Applications

Nariaki Ikeda, Yuki Niiyama, Hiroshi Kambayashi et al. · Proceedings of the IEEE · 2010 · 516 citations

Electrical Engineering, Engineering, Power Device +11

C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE

Sadahiro Kato, Yoshihiro Sato, Hiroshi Sasaki et al. · Journal of Crystal Growth · 2006 · 134 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +8

High power AlGaN/GaN HFET with a high breakdown voltage of over 1.8 kV on 4 inch Si substrates and the suppression of current collapse

Nariaki Ikeda, Syuusuke Kaya, Li Jiang et al. · 2008 · 111 citations

Wide-bandgap Semiconductor, Electrical Engineering, Inch Si Substrates +14

A high-power AlGaN/GaN heterojunction field-effect transistor

Seikoh Yoshida, Hirotatsu Ishii, Jiang Li et al. · Solid-State Electronics · 2003 · 83 citations

Electrical Engineering, Engineering, Applied Physics +2

High-temperature reliability of GaN metal semiconductor field-effect transistor and bipolar junction transistor

Seikoh Yoshida, Joe Suzuki · Journal of Applied Physics · 1999 · 70 citations

Gan Mesfet, Semiconductor Technology, Electrical Engineering +9