Hirotatsu Ishii

Control of compound semiconductor–insulator interfaces by an ultrathin molecular-beam epitaxy Si layer

Hideki Hasegawa, Masamichi Akazawa, Hirotatsu Ishii et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1989 · 106 citations

Engineering, Compound Semiconductor–insulator Interfaces, Optoelectronic Devices +19

Control of Fermi level pinning and recombination processes at GaAs surfaces by chemical and photochemical treatments

Hideki Hasegawa, Hirotatsu Ishii, T. Sawada et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1988 · 86 citations

Materials Science, Materials Engineering, Chemical Engineering +15

GaAs and In_0.53Ga_0.47As MIS Structures Having an Ultrathin Pseudomorphic Interface Control Layer of Si Prepared by MBE

Hideki Hasegawa, Masamichi Akazawa, Ken-ichirou Matsuzaki et al. · Japanese Journal of Applied Physics · 1988 · 84 citations

Engineering, Semiconductor Materials, Mis Structures +18

A high-power AlGaN/GaN heterojunction field-effect transistor

Seikoh Yoshida, Hirotatsu Ishii, Jiang Li et al. · Solid-State Electronics · 2003 · 83 citations

Electrical Engineering, Engineering, Applied Physics +2

Control of GaAs and InGaAs Insulator-Semiconductor and Metal-Semiconductor Interfaces by Ultrathin Molecular Beam Epitaxy Si Layers

Masamichi Akazawa, Hirotatsu Ishii, Hideki Hasegawa · Japanese Journal of Applied Physics · 1991 · 45 citations

Sio 2, Electrical Engineering, Epitaxial Growth +15