Hirotatsu Ishii - Concepedia

Author

Hirotatsu Ishii

Hokkaido University

Also Known As

Hirotatsu ISHII, Hirotatsu Ishii, Hirotatsu Ishii Hirotatsu Ishii

Publications

525

Citations

H-Index

Concepts

All Affiliations

Hokkaido University Furukawa Electric (Japan)

About

Hirotatsu Ishii is an author at Hokkaido University specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	511
2	Applied Physics	9	9	511
3	Electrical Engineering	8	8	425
4	Chemical Engineering	1	1	86
5	Materials Engineering	1	1	86

Hirotatsu Ishii

Publications

511

Citations

H-Index

Page 1

	Year	Citations
Control of compound semiconductor–insulator interfaces by an ultrathin molecular-beam epitaxy Si layer Hideki Hasegawa, Masamichi Akazawa, Hirotatsu Ishii, Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena EngineeringCompound Semiconductor–insulator InterfacesOptoelectronic DevicesSilicon On InsulatorGap State	1989	106
Control of Fermi level pinning and recombination processes at GaAs surfaces by chemical and photochemical treatments Hideki Hasegawa, Hirotatsu Ishii, T. Sawada, Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena Materials ScienceMaterials EngineeringChemical EngineeringIi-vi SemiconductorEngineering	1988	86
GaAs and In<sub>0.53</sub>Ga<sub>0.47</sub>As MIS Structures Having an Ultrathin Pseudomorphic Interface Control Layer of Si Prepared by MBE Hideki Hasegawa, Masamichi Akazawa, Ken-ichirou Matsuzaki, Japanese Journal of Applied Physics EngineeringSemiconductor MaterialsMis StructuresOptoelectronic DevicesIntegrated Circuits	1988	84
A high-power AlGaN/GaN heterojunction field-effect transistor Seikoh Yoshida, Hirotatsu Ishii, Jiang Li, Solid-State Electronics Electrical EngineeringEngineeringApplied PhysicsAluminum Gallium NitrideGan Power Device	2003	83
Control of GaAs and InGaAs Insulator-Semiconductor and Metal-Semiconductor Interfaces by Ultrathin Molecular Beam Epitaxy Si Layers Masamichi Akazawa, Hirotatsu Ishii, Hideki Hasegawa Japanese Journal of Applied Physics Sio 2Electrical EngineeringEpitaxial GrowthMetal-semiconductor InterfacesEngineering	1991	45
Fine-structure N-polarity InN∕InGaN multiple quantum wells grown on GaN underlayer by molecular-beam epitaxy Song‐Bek Che, Wataru Terashima, Yoshihiro Ishitani, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringMolecular-beam EpitaxyGan Underlayer	2005	34
Correlation between Photoluminescence and Surface-State Density on GaAs Surfaces Subjected to Various Surface Treatments Hideki Hasegawa, Toshiya Saitoh, Seiichi Konishi, Japanese Journal of Applied Physics Ii-vi SemiconductorElectrical EngineeringSolid-state LightingEngineeringGaas Surfaces Subjected	1988	32
Characterization of InGaAs surface passivation structure having an ultrathin Si interface control layer Hideki Hasegawa, Masamichi Akazawa, Hirotatsu Ishii, Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena EngineeringOptoelectronic DevicesIntegrated CircuitsSilicon On InsulatorSemiconductor Device	1990	25
AlGaN/GaN Hetero Field-Effect Transistor for a Large Current Operation Seikoh Yoshida, Hirotatsu Ishii, Jiang Li Materials science forum Electrical EngineeringEngineeringAluminum Gallium NitrideApplied PhysicsGan Power Device	2002	16

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