GaAs and In_0.53Ga_0.47As MIS Structures Having an Ultrathin Pseudomorphic Interface Control Layer of Si Prepared by MBE

Abstract

A novel compound semiconductor MIS structure using an ultra-thin partially oxidized MBE Si film as a pseudomorphic interface control layer (ICL) is reported for GaAs and InGaAs. As an outer insulator layer, a silicon dioxide or silicon nitride film is deposited in-situ by a low-temperature photo-CVD process using an ArF excimer laser. While the GaAs MIS structure exhibited strong Fermi level pinning, the InGaAs MIS structure showed completely “unpinned” behavior with a very small hysteresis after annealing. The difference is qualitatively explained by a band line-up of the constituent materials.