T. Sawada

On the electrical properties of compound semiconductor interfaces in metal/insulator/ semiconductor structures and the possible origin of interface states

Hiroshi Hasegawa, T. Sawada · Thin Solid Films · 1983 · 228 citations

Materials Science, Metal/insulator/ Semiconductor Structures, Electrical Engineering +11

Nonalloyed ohmic contacts to <i>n</i>-GaAs by solid-phase epitaxy of Ge

E. D. Marshall, B. Zhang, L. C. Wang et al. · Journal of Applied Physics · 1987 · 206 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +15

Control of Fermi level pinning and recombination processes at GaAs surfaces by chemical and photochemical treatments

Hideki Hasegawa, Hirotatsu Ishii, T. Sawada et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1988 · 86 citations

Materials Science, Materials Engineering, Chemical Engineering +15

A Target of Phosphatidylinositol 3,4,5‐Trisphosphate with a Zinc Finger Motif Similar to that of the ADP‐Ribosylation‐Factor GTPase‐Activating Protein and Two Pleckstrin Homology Domains

Kenichi Tanaka, Shinobu Imajoh‐Ohmi, T. Sawada et al. · European Journal of Biochemistry · 1997 · 83 citations · Full text

Electrical modeling of compound semiconductor interface for FET device assessment

Hiroshi Hasegawa, T. Sawada · IEEE Transactions on Electron Devices · 1980 · 81 citations

Categoryquantum Electronics, Engineering, Inp Metal-insulator-semiconductor +21