Nariaki Ikeda

GaN Power Transistors on Si Substrates for Switching Applications

Nariaki Ikeda, Yuki Niiyama, Hiroshi Kambayashi et al. · Proceedings of the IEEE · 2010 · 516 citations

Electrical Engineering, Engineering, Power Device +11

High power AlGaN/GaN HFET with a high breakdown voltage of over 1.8 kV on 4 inch Si substrates and the suppression of current collapse

Nariaki Ikeda, Syuusuke Kaya, Li Jiang et al. · 2008 · 111 citations

Wide-bandgap Semiconductor, Electrical Engineering, Inch Si Substrates +14

Switching Characteristics of GaN HFETs in a Half Bridge Package for High Temperature Applications

Takahiro Nomura, Muneyuki Masuda, Nariaki Ikeda et al. · IEEE Transactions on Power Electronics · 2008 · 74 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +15

High field-effect mobility normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate by selective area growth technique

Hiroshi Kambayashi, Yoshihiro Sato, Takuya Kokawa et al. · Solid-State Electronics · 2010 · 40 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +8

Over 1.7 kV normally-off GaN hybrid MOS-HFETs with a lower on-resistance on a Si substrate

Nariaki Ikeda, Ryosuke Tamura, Takuya Kokawa et al. · 2011 · 36 citations

Wide-bandgap Semiconductor, Electrical Engineering, Si Substrate +12