GaN Power Transistors on Si Substrates for Switching Applications

Nariaki Ikeda, Yuki Niiyama, Hiroshi Kambayashi, +4

Proceedings of the IEEE

Electrical EngineeringEngineeringPower DeviceNanoelectronicsSi Substrates +9

High power AlGaN/GaN HFET with a high breakdown voltage of over 1.8 kV on 4 inch Si substrates and the suppression of current collapse

Nariaki Ikeda, Syuusuke Kaya, Li Jiang, +3

Wide-bandgap SemiconductorElectrical EngineeringInch Si SubstratesEngineeringNanoelectronics +12

Switching Characteristics of GaN HFETs in a Half Bridge Package for High Temperature Applications

Takahiro Nomura, Muneyuki Masuda, Nariaki Ikeda, +1

IEEE Transactions on Power Electronics

Wide-bandgap SemiconductorElectrical EngineeringEngineeringGan HfetsAlgan/gan Hfet +13

High field-effect mobility normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate by selective area growth technique

Hiroshi Kambayashi, Yoshihiro Sato, Takuya Kokawa, +3

Solid-State Electronics

Materials EngineeringWide-bandgap SemiconductorElectrical EngineeringSi SubstrateEngineering +6

Over 1.7 kV normally-off GaN hybrid MOS-HFETs with a lower on-resistance on a Si substrate

Nariaki Ikeda, Ryosuke Tamura, Takuya Kokawa, +4

Wide-bandgap SemiconductorElectrical EngineeringSi SubstrateEngineeringBarrier Layer +10

High-power AlGaN/GaN MIS-HFETs with field-plates on Si substrates

Nariaki Ikeda, Shusuke Kaya, Li Jiang, +3

IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs

Semiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineeringGan-based Mis-hfet Devices +11

High-Temperature Operation of AlGaN/GaN HFET With a Low on-State Resistance, High Breakdown Voltage, and Fast Switching

Takehiko Nomura, Hiroshi Kambayashi, Mitsuru Masuda, +4

IEEE Transactions on Electron Devices

Wide-bandgap SemiconductorElectrical EngineeringEngineeringAlgan/gan HfetNanoelectronics +11

Over 55 A, 800 V high power AlGaN/GaN HFETs for power switching application

Nariaki Ikeda, Kazúo Kato, Kazuo Kondoh, +3

physica status solidi (a)

Electrical EngineeringEngineeringPower DeviceNew Ohmic ElectrodesApplied Physics +12

Investigation of buffer structures for the growth of a high quality AlGaN/GaN hetero‐structure with a high power operation FET on Si substrate using MOCVD

Seikoh Yoshida, Sadahiro Katoh, Hironari Takehara, +5

physica status solidi (a)

Materials EngineeringMaterials ScienceElectrical EngineeringBuffer StructuresEngineering +11

Normally-Off Operation GaN Based MOSFETs for Power Electronics

Yuki Niiyama, Shinya Ootomo, Hiroshi Kambayashi, +3

Wide-bandgap SemiconductorElectrical EngineeringEngineeringMosfet StructureApplied Physics +10