Masayuki Iwami

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Publications

Citations

217

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Active since

2006

Affiliations

Furukawa Electric (Japan)(Current)

Masayuki Iwami is an author at Furukawa Electric (Japan) specializing in semiconductor devices, wide-bandgap semiconductor devices, and gallium nitride (gan) materials.

Publications per year

2006–2009

Publications

C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE

Sadahiro Kato, Yoshihiro Sato, Hiroshi Sasaki et al. · Journal of Crystal Growth · 2006 · 136 citations

Engineering, Electrical Engineering, Materials Science +15

Normally Off n-Channel GaN MOSFETs on Si Substrates Using an SAG Technique and Ion Implantation

Hiroshi Kambayashi, Yuki Niiyama, Shinya Ootomo et al. · IEEE Electron Device Letters · 2007 · 61 citations

Engineering, Electrical Engineering, Materials Science +16

Enhancement-mode GaN hybrid MOS-HFETs on Si substrates with Over 70 A operation

Hiroshi Kambayashi, Yoshihiro Sato, Yuki Niiyama et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 2009 · 20 citations

Engineering, Electrical Engineering, Materials Science +17

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