High-temperature enhancement mode operation of n-channel GaN MOSFETs on sapphire substrates - Concepedia

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High-temperature enhancement mode operation of n-channel GaN MOSFETs on sapphire substrates

43

Citations

18

References

2007

Year

Takehiko Nomura, Hiroshi Kambayashi, Yuki Niiyama, Shinya Otomo, Seikoh Yoshida

Solid-State Electronics

Wide-bandgap SemiconductorElectrical EngineeringEngineeringSapphire SubstratesApplied PhysicsGan Power DeviceN-channel Gan Mosfets

References

	Year	Citations

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