MBE growth of AlGaN/GaN HEMTs with high power density

Abstract

RF-plasma MBE has been used for the growth of undoped Al0.25Ga0.75N/GaN HEMT structures on semi-insulating SiC substrates. Devices with a 1.5 µm gate length have an fT of 10 GHz and have demonstrated an output power density of 6.3 W/mm at 2 GHz. Details of the growth process and device results are presented.