David F. Storm

Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates

Matthew T. Hardy, Brian P. Downey, Neeraj Nepal et al. · Applied Physics Letters · 2017 · 158 citations

Wide-bandgap Semiconductor, Large Piezoelectric, Engineering +17

Improved reliability of AlGaN-GaN HEMTs using an NH/sub 3/ plasma treatment prior to SiN passivation

Andrew Edwards, J. Mittereder, S.C. Binari et al. · IEEE Electron Device Letters · 2005 · 130 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +14

Strong Coupling of Epsilon-Near-Zero Phonon Polaritons in Polar Dielectric Heterostructures

Nikolai Christian Paßler, Christopher R. Gubbin, Thomas G. Folland et al. · Nano Letters · 2018 · 97 citations · Full text

Site-Specific Mössbauer Evidence of Structure-Induced Magnetic Phase Transition in fcc Fe(100) Thin Films

D. J. Keavney, David F. Storm, J. W. Freeland et al. · Physical Review Letters · 1995 · 80 citations

Magnetic Properties, Engineering, Low-dimensional Magnetism +23

Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress

J. Mittereder, S.C. Binari, P. B. Klein et al. · Applied Physics Letters · 2003 · 77 citations

Wide-bandgap Semiconductor, Electrical Engineering, Bias Stress +12