Brian P. Downey - Concepedia

Author

Brian P. Downey

United States Naval Research Laboratory ORCID

Also Known As

B P Downey, B. P. Downey, B.P. Downey, Brian Downey, Brian P Downey, Brian P. Downey, Downey, Brian P, Downey, Brian P.

111

Publications

1.5K

Citations

H-Index

Concepts

All Affiliations

United States Naval Research Laboratory National Academies of Sciences, Engineering, and Medicine Naval Research Laboratory Electronics Science and Technology Division Cornell University Arizona State University

About

Brian P. Downey is an author at United States Naval Research Laboratory specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	20	36	1.3K
2	Applied Physics	20	36	1.3K
3	Medicine	2	2	52
4	Natural Sciences	1	1	18
5	Biochemistry	1	1	18

Brian P. Downey

Publications

1.4K

Citations

H-Index

Page 1

	Year	Citations
GaN/NbN epitaxial semiconductor/superconductor heterostructures Rusen Yan, Guru Khalsa, Suresh Vishwanath, Nature SemiconductorsEngineeringApplied PhysicsSuperconductivityGan Power Device	2018	162
Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates Matthew T. Hardy, Brian P. Downey, Neeraj Nepal, Applied Physics Letters Wide-bandgap SemiconductorLarge PiezoelectricEngineeringRms RoughnessEpitaxial Scaln	2017	158
<inline-formula> <tex-math notation="TeX">${\rm SiN}_{x}$ </tex-math></inline-formula>/InAlN/AlN/GaN MIS-HEMTs With 10.8 <inline-formula> <tex-math notation="TeX">${\rm THz}\cdot{\rm V}$ </tex-math></inline-formula> Johnson Figure of Merit Brian P. Downey, David J. Meyer, D. S. Katzer, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic Devices\Rm Sin	2014	73
Control of phase purity in high scandium fraction heteroepitaxial ScAlN grown by molecular beam epitaxy Matthew T. Hardy, Eric N. Jin, Neeraj Nepal, Applied Physics Express Materials ScienceElectrical EngineeringEpitaxial GrowthEngineeringCrystalline Defects	2020	71
Heteroepitaxial growth of β-Ga2O3 films on SiC via molecular beam epitaxy Neeraj Nepal, D. S. Katzer, Brian P. Downey, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Wide-bandgap SemiconductorEngineeringHeteroepitaxial GrowthSemiconductorsWide-bandgap Semiconductors	2020	62
High Electron Velocity Submicrometer AlN/GaN MOS-HEMTs on Freestanding GaN Substrates David J. Meyer, David A. Deen, David F. Storm, IEEE Electron Device Letters SemiconductorsOxide HeterostructuresElectrical EngineeringWide-bandgap SemiconductorGan Substrates	2013	57
Epitaxial Lift-Off and Transfer of III-N Materials and Devices from SiC Substrates David J. Meyer, Brian P. Downey, D. S. Katzer, IEEE Transactions on Semiconductor Manufacturing Wide-bandgap SemiconductorEpitaxial Lift-offEngineeringElo MethodNanoelectronics	2016	51
Epitaxial ScAlN Etch-Stop Layers Grown by Molecular Beam Epitaxy for Selective Etching of AlN and GaN Matthew T. Hardy, Brian P. Downey, David J. Meyer, IEEE Transactions on Semiconductor Manufacturing Materials ScienceMaterials EngineeringAluminium NitrideWide-bandgap SemiconductorSelective Etching	2017	48
Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates David F. Storm, Matthew T. Hardy, D. S. Katzer, Journal of Crystal Growth Electrical EngineeringCritical IssuesEngineeringApplied PhysicsGan Power Device	2016	46
Epitaxial metallic β-Nb<sub>2</sub>N films grown by MBE on hexagonal SiC substrates D. S. Katzer, Neeraj Nepal, David J. Meyer, Applied Physics Express Materials EngineeringMaterials ScienceSemiconductor TechnologyEngineeringCrystalline Defects	2015	44

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