J. Mittereder

Improved reliability of AlGaN-GaN HEMTs using an NH/sub 3/ plasma treatment prior to SiN passivation

Andrew Edwards, J. Mittereder, S.C. Binari et al. · IEEE Electron Device Letters · 2005 · 130 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +14

Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress

J. Mittereder, S.C. Binari, P. B. Klein et al. · Applied Physics Letters · 2003 · 77 citations

Wide-bandgap Semiconductor, Electrical Engineering, Bias Stress +12

Ion-implantation in bulk semi-insulating 4H–SiC

Mulpuri V. Rao, Jesse B. Tucker, M. C. Ridgway et al. · Journal of Applied Physics · 1999 · 56 citations

Materials Engineering, Materials Science, Electrical Engineering +13

Reliable Ti/Al and Ti/Al/Ni/Au ohmic contacts to <i>n</i>-type GaN formed by vacuum annealing

N. A. Papanicolaou, Mulpuri V. Rao, J. Mittereder et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2001 · 46 citations

Materials Engineering, Materials Science, Electrical Engineering +14

Effectiveness of AlN encapsulant in annealing ion-implanted SiC

Evan M. Handy, Mulpuri V. Rao, Keith Jones et al. · Journal of Applied Physics · 1999 · 45 citations

Materials Engineering, Materials Science, Electrical Engineering +12