Jesse B. Tucker

Structure of stacking faults formed during the forward bias of 4H-SiC p-i-n diodes

M. E. Twigg, Robert E. Stahlbush, M. Fatemi et al. · Applied Physics Letters · 2003 · 61 citations

Engineering, Materials Engineering, Materials Science +17

Ion-implantation in bulk semi-insulating 4H–SiC

Mulpuri V. Rao, Jesse B. Tucker, M. C. Ridgway et al. · Journal of Applied Physics · 1999 · 57 citations

Natural Sciences, Materials Engineering, Materials Science +13

Microwave power SiC MESFETs and GaN HEMTs

A.P. Zhang, L.B. Rowland, E.B. Kaminsky et al. · Solid-State Electronics · 2003 · 49 citations

Engineering, Electrical Engineering, Materials Science +14

High temperature Hall effect sensors based on AlGaN∕GaN heterojunctions

H. J. Lü, Peter Sandvik, A. Vertiatchikh et al. · Journal of Applied Physics · 2006 · 47 citations

Engineering, Electrical Engineering, Materials Science +17

9.2 W/mm (13.8 W) AlGaN/GaN HEMTs at 10 GHz and 55 V drain bias

A.P. Zhang, L.B. Rowland, E.B. Kaminsky et al. · Electronics Letters · 2003 · 33 citations

Engineering, Electrical Engineering, Materials Science +17