L.B. Rowland - Concepedia

Author

L.B. Rowland

United States Naval Research Laboratory

Also Known As

L. B. Rowland, L. Rowland, L.B Rowland, L.B. Rowland

Publications

4.2K

Citations

H-Index

Concepts

All Affiliations

United States Naval Research Laboratory Northrop Grumman (United States)General Electric (United States)North Carolina State University Sterling Research Group

About

L.B. Rowland is an author at United States Naval Research Laboratory specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	32	51	3.9K
2	Applied Physics	31	45	3.8K
3	Natural Sciences	1	1	327
4	Chemical Engineering	1	1	61
5	Chemistry	1	1	327

L.B. Rowland

Publications

4.1K

Citations

H-Index

Page 1

	Year	Citations
Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor deposition E. R. Glaser, T. A. Kennedy, K. Doverspike, Physical review. B, Condensed matter Wide-bandgap SemiconductorOptical MaterialsEngineeringMagnetic ResonanceUndoped Gan Films	1995	327
Microstructural characterization of α-GaN films grown on sapphire by organometallic vapor phase epitaxy Weijin Qian, Marek Skowroński, Marc De Graef, Applied Physics Letters Materials ScienceAluminium NitrideWide-bandgap SemiconductorEngineeringCrystalline Defects	1995	284
Dislocation conversion in 4H silicon carbide epitaxy S. Ha, P. Mieszkowski, Marek Skowroński, Journal of Crystal Growth Materials EngineeringMaterials ScienceEngineeringDislocation InteractionApplied Physics	2002	234
SiC materials-progress, status, and potential roadblocks Adrian R. Powell, L.B. Rowland Proceedings of the IEEE Materials ScienceMaterials EngineeringElectrical EngineeringSic MaterialsEngineering	2002	229
Open-core screw dislocations in GaN epilayers observed by scanning force microscopy and high-resolution transmission electron microscopy Weijin Qian, Gregory S. Rohrer, Marek Skowroński, Applied Physics Letters Wide-bandgap SemiconductorEngineeringForce MicroscopyScrew DislocationsOpen-core Dislocation	1995	215
Temperature dependence of Fowler-Nordheim current in 6H- and 4H-SiC MOS capacitors Anant Agarwal, S. R. Seshadri, L.B. Rowland IEEE Electron Device Letters Electrical EngineeringEngineeringEffective Barrier HeightPower DeviceNanoelectronics	1997	190
Correlation of device performance and defects in AlGaN/GaN high-electron mobility transistors A. P. Zhang, L.B. Rowland, E.B. Kaminsky, Journal of Electronic Materials Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsDevice Performance	2003	156
Microwave performance of GaN MESFETs S.C. Binari, L.B. Rowland, W. Kruppa, Electronics Letters Wide-bandgap SemiconductorElectrical EngineeringMicrowave PerformanceEngineeringRf Semiconductor	1994	153
Development of a silicon carbide radiation detector F.H. Ruddy, A.R. Dulloo, J.G. Seidel, IEEE Transactions on Nuclear Science Electrical EngineeringRadiation Detection PropertiesEngineeringRadiation DetectionApplied Physics	1998	151
H, He, and N implant isolation of n-type GaN S.C. Binari, H.B. Dietrich, G. Kelner, Journal of Applied Physics Materials ScienceMaterials EngineeringElectrical EngineeringH ImplantationHigh Temperature Materials	1995	138

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