L.B. Rowland

Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor deposition

E. R. Glaser, T. A. Kennedy, K. Doverspike et al. · Physical review. B, Condensed matter · 1995 · 327 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +16

Microstructural characterization of α-GaN films grown on sapphire by organometallic vapor phase epitaxy

Weijin Qian, Marek Skowroński, Marc De Graef et al. · Applied Physics Letters · 1995 · 284 citations

Materials Science, Aluminium Nitride, Wide-bandgap Semiconductor +13

Dislocation conversion in 4H silicon carbide epitaxy

S. Ha, P. Mieszkowski, Marek Skowroński et al. · Journal of Crystal Growth · 2002 · 234 citations

Materials Engineering, Materials Science, Engineering +4

SiC materials-progress, status, and potential roadblocks

Adrian R. Powell, L.B. Rowland · Proceedings of the IEEE · 2002 · 229 citations

Materials Science, Materials Engineering, Electrical Engineering +15

Open-core screw dislocations in GaN epilayers observed by scanning force microscopy and high-resolution transmission electron microscopy

Weijin Qian, Gregory S. Rohrer, Marek Skowroński et al. · Applied Physics Letters · 1995 · 215 citations

Wide-bandgap Semiconductor, Engineering, Force Microscopy +16