Dislocation conversion in 4H silicon carbide epitaxy

Step-controlled epitaxial growth of SiC: High quality homoepitaxy

Hiroyuki Matsunami, Tsunenobu Kimoto · Materials Science and Engineering R Reports · 1997 · 609 citations

Engineering, Materials Engineering, Materials Science +14

Performance limiting micropipe defects in silicon carbide wafers

Philip G. Neudeck, J. A. Powell · IEEE Electron Device Letters · 1994 · 307 citations · Full text

Engineering, Electrical Engineering, Materials Science +16

The elastic constants of silicon carbide: A Brillouin-scattering study of 4H and 6H SiC single crystals

Kazutaka Kamitani, M. Grimsditch, J. C. Nipko et al. · Journal of Applied Physics · 1997 · 250 citations

Natural Sciences, Materials Science, Physics +10

Performance limiting surface defects in SiC epitaxial p-n junction diodes

Tsunenobu Kimoto, N. Miyamoto, H. Matsunami · IEEE Transactions on Electron Devices · 1999 · 221 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Introduction to dislocations, 3rd ed.

Anne G. Crocker · Endeavour · 1985 · 195 citations

Natural Sciences, Materials Science, Orthopedic Surgery +8