Electronics Letters · 2003 · 33 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationHigh-frequency Semiconductor DevicesMicrowave Semiconductor DevicesSemiconductor Device MaterialsSemiconductor PhysicsWide Band Gap SemiconductorsGallium NitrideGallium Nitride (Gan) MaterialsGallium Nitride Power DevicesGan-based High-frequency DevicesHigh-temperature Device OperationPower DensitySelf-heating EffectsSelf-heating Modeling
1.5 mm gate periphery AlGaN/GaN HEMTs were fabricated and tested. 9.2 W/mm (total 13.8 W) power was obtained at 10 GHz under pulsed conditions without active cooling. The pulse width was 50 µs with 5% duty cycle. This is the state-of-the-art power density demonstrated from the similar size devices. The device was biased at up to 55 V drain bias. At the above pulse conditions and drain bias, the simulated maximum junction temperature was 170°C, indicating that device performance was limited by the self-heating effect.
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Trapping effects in GaN and SiC microwave FETs
S.C. Binari, P. B. Klein, T.E. Kazior · Proceedings of the IEEE · 2002 · 454 citations