T.E. Kazior - Concepedia

Author

T.E. Kazior

Also Known As

Kazior, T. E., Kazior, T.E., T. E. KAZIOR, T. E. Kazior, T. Kazior, T.E Kazior, T.E. Kazior, Thomas E Kazior, Thomas E. Kazior, Thomas Kazior

Publications

3.3K

Citations

H-Index

Concepts

All Affiliations

RTX (United States)Massachusetts Institute of Technology Advanced Device Technology (United States)Teledyne Technologies (United States)United States Naval Research Laboratory

About

T.E. Kazior is an author at RTX (United States) specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	20	34	3.1K
2	Applied Physics	18	29	3K
3	Computer Engineering	6	6	161
4	Chemical Engineering	1	1	24
5	Chemistry	1	1	24

T.E. Kazior

Publications

3.2K

Citations

H-Index

Page 1

	Year	Citations
GaN-Based RF Power Devices and Amplifiers Umesh K. Mishra, Likun Shen, T.E. Kazior, Proceedings of the IEEE Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorGan Hemt Technologies	2008	1.7K
Trapping effects in GaN and SiC microwave FETs S.C. Binari, P. B. Klein, T.E. Kazior Proceedings of the IEEE Gaas TechnologyWide-bandgap SemiconductorElectrical EngineeringSemiconductor DeviceEngineering	2002	453
Beyond CMOS: heterogeneous integration of III–V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems T.E. Kazior Philosophical Transactions of the Royal Society A Mathematical Physical and Engineering Sciences EngineeringDevice IntegrationMicroelectromechanical SystemsSige Bicmos ProcessSemiconductor Device	2014	90
Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit W. E. Hoke, R.V. Chelakara, John Bettencourt, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena Wide-bandgap SemiconductorEngineeringDevice IntegrationRf SemiconductorNanoelectronics	2011	85
Monolithic integration of InP-based transistors on Si substrates using MBE W.K. Liu, D. Lubyshev, J. M. Fastenau, Journal of Crystal Growth Electrical EngineeringWafer Scale ProcessingEngineeringAdvanced Packaging (Semiconductors)Device Integration	2008	59
Low noise In/sub 0.32/(AlGa)/sub 0.68/As/In/sub 0.43/Ga/sub 0.57/As metamorphic HEMT on GaAs substrate with 850 mW/mm output power density C.S. Whelan, W.F. Hoke, R.A. McTaggart, IEEE Electron Device Letters Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringEngineeringμM T-gate Mhemt	2000	53
The electrical behavior of GaAs-insulator interfaces: A discrete energy interface state model T.E. Kazior, J. Łagowski, H. C. Gatos Journal of Applied Physics EngineeringSemiconductor PhysicsGaas Mis StructuresSemiconductor DeviceSemiconductors	1983	53
High Performance Mixed Signal and RF Circuits Enabled by the Direct Monolithic Heterogeneous Integration of GaN HEMTs and Si CMOS on a Silicon Substrate T.E. Kazior, R.V. Chelakara, W. E. Hoke, Electrical EngineeringEngineeringGan HemtsRf CircuitsThree-dimensional Heterogeneous Integration	2011	49
Passivation Schemes for ScAlN-Barrier mm-Wave High Electron Mobility Transistors Maher Tahhan, John Logan, Matthew T. Hardy, IEEE Transactions on Electron Devices Passivation DesignWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2022	41
Millimeter-wave low-noise and high-power metamorphic HEMT amplifiers and devices on GaAs substrates C.S. Whelan, T.E. Kazior, P.F. Marsh, IEEE Journal of Solid-State Circuits Electrical EngineeringMhemt DeviceEngineeringMillimeter Wave TechnologyGaas Substrates	2000	38

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