D. Lubyshev

Fabrication, characterization, and physics of III–V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing

G. Dewey, B. Chu-Kung, J. Boardman et al. · 2011 · 333 citations

Engineering, Electrical Engineering, Materials Engineering +17

High performance continuous wave 1.3 <i>μ</i>m quantum dot lasers on silicon

Alan Y. Liu, Chong Zhang, Justin Norman et al. · Applied Physics Letters · 2014 · 332 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb

Elizabeth H. Steenbergen, Blair C. Connelly, Grace D. Metcalfe et al. · Applied Physics Letters · 2011 · 306 citations

Engineering, Materials Engineering, Materials Science +17

Exciton localization and temperature stability in self-organized InAs quantum dots

D. Lubyshev, Pedro Pablo González‐Borrero, E. Marega et al. · Applied Physics Letters · 1996 · 259 citations · Full text

Natural Sciences, Materials Science, Physics +17

Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to-source separation

M. Radosavljević, G. Dewey, Dipanjan Basu et al. · 2011 · 136 citations

Engineering, Electrical Engineering, Materials Science +13