M. Radosavljević

Benchmarking Nanotechnology for High-Performance and Low-Power Logic Transistor Applications

Suman Datta, M. Doczy, Barry M. Doyle et al. · IEEE Transactions on Nanotechnology · 2005 · 639 citations

Device Modeling, Electrical Engineering, Electronic Devices +12

Tunneling Versus Thermionic Emission in One-Dimensional Semiconductors

Joerg Appenzeller, M. Radosavljević, Joachim Knoch et al. · Physical Review Letters · 2004 · 341 citations

Semiconductors, Electrical Engineering, Semiconductor Device +12

Fabrication, characterization, and physics of III–V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing

G. Dewey, B. Chu-Kung, J. Boardman et al. · 2011 · 331 citations

Semiconductor Technology, V Heterojunction, Electrical Engineering +12

Tri-Gate Transistor Architecture with High-k Gate Dielectrics, Metal Gates and Strain Engineering

J. Kavalieros, Barry M. Doyle, Suman Datta et al. · 2006 · 220 citations

Semiconductor Technology, Electrical Engineering, Metal Gate Electrodes +11

Drain voltage scaling in carbon nanotube transistors

M. Radosavljević, Stefan Heinze, J. Tersoff et al. · Applied Physics Letters · 2003 · 203 citations · Full text