G. Dewey

Fabrication, characterization, and physics of III–V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing

G. Dewey, B. Chu-Kung, J. Boardman et al. · 2011 · 333 citations

Engineering, Electrical Engineering, Materials Engineering +17

Tri-Gate Transistor Architecture with High-k Gate Dielectrics, Metal Gates and Strain Engineering

J. Kavalieros, Barry M. Doyle, Suman Datta et al. · 2006 · 220 citations

Engineering, Electrical Engineering, Materials Science +17

Application of high-κ gate dielectrics and metal gate electrodes to enable silicon and non-silicon logic nanotechnology

R. Chau, J.K. Brask, Suman Datta et al. · Microelectronic Engineering · 2005 · 145 citations

Engineering, Materials Engineering, Materials Science +16

Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to-source separation

M. Radosavljević, G. Dewey, Dipanjan Basu et al. · 2011 · 136 citations

Engineering, Electrical Engineering, Materials Science +13

Advanced high-K gate dielectric for high-performance short-channel In<inf>0.7</inf>Ga<inf>0.3</inf>As quantum well field effect transistors on silicon substrate for low power logic applications

M. Radosavljević, B. Chu-Kung, S. Corcoran et al. · 2009 · 136 citations

Engineering, Electrical Engineering, Materials Science +17