S. Corcoran

Advanced high-K gate dielectric for high-performance short-channel In<inf>0.7</inf>Ga<inf>0.3</inf>As quantum well field effect transistors on silicon substrate for low power logic applications

M. Radosavljević, B. Chu-Kung, S. Corcoran et al. · 2009 · 136 citations

Semiconductor Technology, Electrical Engineering, Engineering +13

High mobility strained germanium quantum well field effect transistor as the p-channel device option for low power (Vcc = 0.5 V) III–V CMOS architecture

R. Pillarisetty, B. Chu-Kung, S. Corcoran et al. · 2010 · 89 citations

Engineering, Applied Algebra, Semiconductor Device +16

Sources of error in quantitative depth profiling of shallow doping distributions by secondary-ion-mass spectrometry in combination with oxygen flooding

K. Wittmaack, S. Corcoran · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1998 · 59 citations

Oblique Oxygen Bombardment, Engineering, Secondary-ion-mass Spectrometry +24

Dopant Redistribution during Thermal Oxidation of Monocrystalline Beta ‐ SiC Thin Films

John W. Palmour, R. F. Davis, Hoyoul Kong et al. · Journal of The Electrochemical Society · 1989 · 37 citations

Materials Science, Boron Profile, Chemical Engineering +14

Nonmelt laser annealing of 5-KeV and 1-KeV boron-implanted silicon

Susan Earles, Mark E. Law, R. Brindos et al. · IEEE Transactions on Electron Devices · 2002 · 35 citations

Materials Engineering, Materials Science, Advanced Laser Processing +14