R. F. Davis

Strain-related phenomena in GaN thin films

C. Kisielowski, Joachim Krüger, S. Ruvimov et al. · Physical review. B, Condensed matter · 1996 · 877 citations

Materials Science, Materials Engineering, Point Defects +15

Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy

Okhyun Nam, M. D. Bremser, Tsvetanka Zheleva et al. · Applied Physics Letters · 1997 · 651 citations

Materials Science, Materials Engineering, High Density +13

Dislocation density reduction via lateral epitaxy in selectively grown GaN structures

Tsvetanka Zheleva, Okhyun Nam, M. D. Bremser et al. · Applied Physics Letters · 1997 · 493 citations

Wide-bandgap Semiconductor, Engineering, Grown Gan Structures +16

Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide

R. F. Davis, G. Kelner, M. S. Shur et al. · Proceedings of the IEEE · 1991 · 404 citations

Engineering, Monocrystalline Alpha, Silicon Carbide +20

Gold Schottky contacts on oxygen plasma-treated, <i>n</i>-type ZnO(0001)

B. J. Coppa, R. F. Davis, R. J. Nemanich · Applied Physics Letters · 2003 · 399 citations