R. F. Davis - Concepedia

Author

R. F. Davis

Also Known As

Davis, R., Davis, R. F., Davis, R.F., Davis, R.F.; Mills, K.A.; Thornton, G.; Kevan, S.D.; Shirley, D.A., Davis, Robert, Davis,R F, Davis,Robert F, K Niskanen, M Violette, R DAVIS

961

Publications

25.5K

Citations

H-Index

210

Concepts

All Affiliations

North Carolina State University Carnegie Mellon University Arizona State University

About

R. F. Davis is an author at North Carolina State University specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	75	351	20.3K
2	Medicine	7	7	407
3	Health Sciences	2	2	42
4	Arts	1	1	158
5	Management	1	1	158

R. F. Davis

399

Publications

22.9K

Citations

H-Index

Page 1

	Year	Citations
Strain-related phenomena in GaN thin films C. Kisielowski, Joachim Krüger, S. Ruvimov, Physical review. B, Condensed matter Materials ScienceMaterials EngineeringPoint DefectsEngineeringPhysics	1996	877
Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy Okhyun Nam, M. D. Bremser, Tsvetanka Zheleva, Applied Physics Letters Materials ScienceMaterials EngineeringHigh DensityWide-bandgap SemiconductorEngineering	1997	651
Dislocation density reduction via lateral epitaxy in selectively grown GaN structures Tsvetanka Zheleva, Okhyun Nam, M. D. Bremser, Applied Physics Letters Wide-bandgap SemiconductorEngineeringGrown Gan StructuresElectron MicroscopyNanoelectronics	1997	493
Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide R. F. Davis, G. Kelner, M. S. Shur, Proceedings of the IEEE EngineeringMonocrystalline AlphaSilicon CarbideOptoelectronic DevicesThin Film Process Technology	1991	404
Gold Schottky contacts on oxygen plasma-treated, <i>n</i>-type ZnO(0001) B. J. Coppa, R. F. Davis, R. J. Nemanich Applied Physics Letters	2003	399
III-V nitrides for electronic and optoelectronic applications R. F. Davis Proceedings of the IEEE Aluminium NitrideIii-v NitridesEngineeringCubic Boron NitrideOptoelectronic Devices	1991	392
Growth of cubic phase gallium nitride by modified molecular-beam epitaxy Michael J. Paisley, Zlatko Sitar, J. B. Posthill, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Materials ScienceCrystal StructureElectrical EngineeringWide-bandgap SemiconductorEngineering	1989	362
Cleaning of AlN and GaN surfaces Sean W. King, J. P. Barnak, M. D. Bremser, Journal of Applied Physics Materials ScienceMaterials EngineeringChemical EngineeringAluminium NitrideEngineering	1998	299
GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high-temperature monocrystalline AlN buffer layers T. W. Weeks, M. D. Bremser, K. S. Ailey, Applied Physics Letters Materials ScienceSemiconductorsWide-bandgap SemiconductorEngineeringCrystalline Defects	1995	249
Epitaxial Growth and Characterization of β ‐ SiC Thin Films Peter K. Liaw, R. F. Davis Journal of The Electrochemical Society Materials ScienceMaterials EngineeringEngineeringCrystalline DefectsCrack‐free Monocrystalline Films	1985	246

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