M. D. Bremser - Concepedia

Author

M. D. Bremser

North Carolina State University

Also Known As

M Bremser, M. Bremser, M. D. Bremser, M.D Bremser, M.D. Bremser, Michael Bremser, Michael D Bremser, Michael D. Bremser

104

Publications

4.8K

Citations

H-Index

Concepts

All Affiliations

North Carolina State University Oklahoma State University University of North Carolina at Chapel Hill Honeywell (United States)University of Konstanz

About

M. D. Bremser is an author at North Carolina State University specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	29	44	4.5K
2	Applied Physics	29	46	4.6K
3	Chemistry	2	2	360
4	Natural Sciences	1	1	61
5	Chemical Engineering	1	1	299

M. D. Bremser

Publications

4.7K

Citations

H-Index

Page 1

	Year	Citations
Strain-related phenomena in GaN thin films C. Kisielowski, Joachim Krüger, S. Ruvimov, Physical review. B, Condensed matter Materials ScienceMaterials EngineeringPoint DefectsEngineeringPhysics	1996	877
Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy Okhyun Nam, M. D. Bremser, Tsvetanka Zheleva, Applied Physics Letters Materials ScienceMaterials EngineeringHigh DensityWide-bandgap SemiconductorEngineering	1997	651
Dislocation density reduction via lateral epitaxy in selectively grown GaN structures Tsvetanka Zheleva, Okhyun Nam, M. D. Bremser, Applied Physics Letters Wide-bandgap SemiconductorEngineeringGrown Gan StructuresElectron MicroscopyNanoelectronics	1997	493
Cleaning of AlN and GaN surfaces Sean W. King, J. P. Barnak, M. D. Bremser, Journal of Applied Physics Materials ScienceMaterials EngineeringChemical EngineeringAluminium NitrideEngineering	1998	299
GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high-temperature monocrystalline AlN buffer layers T. W. Weeks, M. D. Bremser, K. S. Ailey, Applied Physics Letters Materials ScienceSemiconductorsWide-bandgap SemiconductorEngineeringCrystalline Defects	1995	249
High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma S.A. Smith, Colin A. Wolden, M. D. Bremser, Applied Physics Letters Aluminium NitrideSelective EtchingEngineeringAluminum NitrideHigh Rate	1997	174
Strain effects on excitonic transitions in GaN: Deformation potentials W. Shan, R. J. Hauenstein, A. J. Fischer, Physical review. B, Condensed matter Materials EngineeringMaterials ScienceWide-bandgap SemiconductorEngineeringPhysics	1996	164
Growth of GaN and Al<sub>0.2</sub>Ga<sub>0.8</sub>N on Patterened Substrates via Organometallic Vapor Phase Epitaxy O. H. Nam, M. D. Bremser, Brandon Ward, Japanese Journal of Applied Physics Materials ScienceMaterials EngineeringAluminium NitridePatterened SubstratesEngineering	1997	124
Growth, Doping and Characterization of Al<sub>x</sub>Ga<sub>1−x</sub>N Thin Film Alloys on 6H-SiC(0001) Substrates M. D. Bremser, W. G. Perry, Tsvetanka Zheleva, MRS Internet Journal of Nitride Semiconductor Research	1996	104
Binding energy for the intrinsic excitons in wurtzite GaN W. Shan, B. D. Little, A. J. Fischer, Physical review. B, Condensed matter Aluminium NitrideWide-bandgap SemiconductorIntrinsic Free ExcitonsEngineeringPhysics	1996	100

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