M. D. Bremser

Strain-related phenomena in GaN thin films

C. Kisielowski, Joachim Krüger, S. Ruvimov et al. · Physical review. B, Condensed matter · 1996 · 877 citations

Materials Science, Materials Engineering, Point Defects +15

Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy

Okhyun Nam, M. D. Bremser, Tsvetanka Zheleva et al. · Applied Physics Letters · 1997 · 651 citations

Materials Science, Materials Engineering, High Density +13

Dislocation density reduction via lateral epitaxy in selectively grown GaN structures

Tsvetanka Zheleva, Okhyun Nam, M. D. Bremser et al. · Applied Physics Letters · 1997 · 493 citations

Wide-bandgap Semiconductor, Engineering, Grown Gan Structures +16

Cleaning of AlN and GaN surfaces

Sean W. King, J. P. Barnak, M. D. Bremser et al. · Journal of Applied Physics · 1998 · 299 citations

Materials Science, Materials Engineering, Chemical Engineering +13

GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high-temperature monocrystalline AlN buffer layers

T. W. Weeks, M. D. Bremser, K. S. Ailey et al. · Applied Physics Letters · 1995 · 249 citations

Materials Science, Semiconductors, Wide-bandgap Semiconductor +10