T. W. Weeks

GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high-temperature monocrystalline AlN buffer layers

T. W. Weeks, M. D. Bremser, K. S. Ailey et al. · Applied Physics Letters · 1995 · 249 citations

Materials Science, Semiconductors, Wide-bandgap Semiconductor +10

Pulsed operation lasing in a cleaved-facet InGaN/GaNMQW SCH laser grown on 6H-SiC

G. E. Bulman, K. Doverspike, S.T. Sheppard et al. · Electronics Letters · 1997 · 135 citations

UV photoemission study of heteroepitaxial AlGaN films grown on 6H-SiC

Mark C. Benjamin, M. D. Bremser, T. W. Weeks et al. · Applied Surface Science · 1996 · 69 citations

Materials Science, Engineering, Applied Physics +4

Real-time assessment of overlayer removal on GaN, AlN, and AlGaN surfaces using spectroscopic ellipsometry

N. V. Edwards, M. D. Bremser, T. W. Weeks et al. · Applied Physics Letters · 1996 · 61 citations

Materials Engineering, Materials Science, Abrupt Gan +15

Gain characteristics of InGaN/GaN quantum well diode lasers

Y.-K. Song, Martin Kuball, A. V. Nurmikko et al. · Applied Physics Letters · 1998 · 60 citations

Moderate Current Density, Photonics, Engineering +12