Mark C. Benjamin

Observation of a negative electron affinity for heteroepitaxial AlN on α(6H)-SiC(0001)

Mark C. Benjamin, Cheng Wang, R. F. Davis et al. · Applied Physics Letters · 1994 · 220 citations

Materials Science, Semiconductors, Surface Fermi Level +15

Observation of a negative electron affinity for boron nitride

Matthew Powers, Mark C. Benjamin, Lisa M. Porter et al. · Applied Physics Letters · 1995 · 174 citations

Materials Science, Boron Nitride, Engineering +11

Negative electron affinity surfaces of aluminum nitride and diamond

R. J. Nemanich, P. K. Baumann, Mark C. Benjamin et al. · Diamond and Related Materials · 1996 · 90 citations

Materials Science, Surface Characterization, Diamond-like Carbon +6

Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction

Sean W. King, Carsten Ronning, R. F. Davis et al. · Journal of Applied Physics · 1998 · 78 citations

Materials Science, Semiconductors, Electrical Engineering +13

UV photoemission study of heteroepitaxial AlGaN films grown on 6H-SiC

Mark C. Benjamin, M. D. Bremser, T. W. Weeks et al. · Applied Surface Science · 1996 · 69 citations

Materials Science, Engineering, Applied Physics +4