N. V. Edwards - Concepedia

Author

N. V. Edwards

North Carolina State University

Also Known As

N. V. Edwards, N. V. Ginger Edwards, N.V Edwards, N.V. Edwards, Nora Edwards, Nora V. Edwards

Publications

1.1K

Citations

H-Index

Concepts

All Affiliations

North Carolina State University Linköping University Motorola (United States)Technische Universität Berlin University of North Carolina at Chapel Hill

About

N. V. Edwards is an author at North Carolina State University specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	22	864
2	Applied Physics	15	21	852
3	Electrical Engineering	6	6	336
4	Natural Sciences	2	2	75
5	Chemistry	1	1	61

N. V. Edwards

Publications

979

Citations

H-Index

Page 1

	Year	Citations
Impact of Deposition and Annealing Temperature on Material and Electrical Characteristics of ALD HfO[sub 2] Dina H. Triyoso, R. Liu, D. Roan, Journal of The Electrochemical Society Aluminium NitrideEngineeringThin Film Process TechnologyChemical DepositionGate Dielectric	2004	165
Surface phenomena related to mirror degradation in extreme ultraviolet (EUV) lithography Theodore E. Madey, N. S. Faradzhev, B. V. Yakshinskiy, Applied Surface Science Materials ScienceEngineeringSurface PhenomenaBeam LithographyMicrofabrication	2006	120
Growth, Doping and Characterization of Al<sub>x</sub>Ga<sub>1−x</sub>N Thin Film Alloys on 6H-SiC(0001) Substrates M. D. Bremser, W. G. Perry, Tsvetanka Zheleva, MRS Internet Journal of Nitride Semiconductor Research	1996	104
Properties of ultrathin films appropriate for optics capping layers exposed to high energy photon irradiation S. Bajt, N. V. Edwards, Theodore E. Madey Surface Science Reports Materials SciencePhotonicsOptical MaterialsEnergy Photon IrradiationEngineering	2007	69
Real-time assessment of overlayer removal on GaN, AlN, and AlGaN surfaces using spectroscopic ellipsometry N. V. Edwards, M. D. Bremser, T. W. Weeks, Applied Physics Letters Materials EngineeringMaterials ScienceAbrupt GanAluminium NitrideEngineering	1996	61
HfO[sub 2] Gate Dielectrics Deposited via Tetrakis Diethylamido Hafnium J. K. Schaeffer, N. V. Edwards, Rui Liu, Journal of The Electrochemical Society Materials EngineeringMaterials ScienceElectrical EngineeringEngineeringOxide Electronics	2003	60
Variation of GaN valence bands with biaxial stress and quantification of residual stress N. V. Edwards, Seunghyun Yoo, M. D. Bremser, Applied Physics Letters Materials EngineeringMaterials ScienceWide-bandgap SemiconductorEpitaxial GrowthEngineering	1997	52
Trends in residual stress for GaN/AlN/6H–SiC heterostructures N. V. Edwards, M. D. Bremser, R. F. Davis, Applied Physics Letters Materials EngineeringMaterials ScienceElectrical EngineeringSemiconductorsEngineering	1998	43
Structural characterization of thick, high-quality epitaxial Ge on Si substrates grown by low-energy plasma-enhanced chemical vapor deposition Shawn Thomas, Sushil Bharatan, Robert E. Jones, Journal of Electronic Materials Materials ScienceStructural CharacterizationEngineeringSi SubstratesHigh-quality Epitaxial Ge	2003	40
Optical properties of 4H–SiC Rajeev Ahuja, A. Ferreira da Silva, Clas Persson, Journal of Applied Physics Optical MaterialsEngineeringOptoelectronic DevicesDielectric FunctionsOptical Characterization	2002	37

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