Fermi-Level Pinning at the Polysilicon/Metal Oxide Interface—Part I

C. C. Hobbs, L. R. C. Fonseca, A. A. Knizhnik, +17

IEEE Transactions on Electron Devices

Electrical EngineeringEngineeringPhysicsNanoelectronicsPolysilicon/metal Oxide Interface +11

Fermi-Level Pinning at the Polysilicon/Metal–Oxide Interface—Part II

C. C. Hobbs, L. R. C. Fonseca, A. A. Knizhnik, +17

IEEE Transactions on Electron Devices

Materials ScienceElectrical EngineeringSemiconductor DeviceEngineeringPhysics +12

Impact of Deposition and Annealing Temperature on Material and Electrical Characteristics of ALD HfO[sub 2]

Dina H. Triyoso, R. Liu, D. Roan, +14

Journal of The Electrochemical Society

Aluminium NitrideEngineeringThin Film Process TechnologyChemical DepositionGate Dielectric +16

Fermi level pinning at the polySi/metal oxide interface

Chris Hobbs, L.M. Fonseca, V. Dhandapani, +15

EngineeringSilicon On InsulatorSemiconductor DeviceFermi Level PinningNanoelectronics +14

Physical and electrical properties of metal gate electrodes on HfO2 gate dielectrics

J. Schaeffer, S. Samavedam, D. C. Gilmer, +15

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

EngineeringElectrical PropertiesGate DielectricSemiconductor DeviceSemiconductors +16

Impact of Zr addition on properties of atomic layer deposited HfO2

Dina H. Triyoso, R. I. Hegde, J. K. Schaeffer, +6

Applied Physics Letters

EngineeringZr AdditionAtomic LayerIi-vi SemiconductorCorrosion +14

Compatibility of polycrystalline silicon gate deposition with HfO2 and Al2O3/HfO2 gate dielectrics

D. C. Gilmer, R. I. Hegde, R. Cotton, +14

Applied Physics Letters

Materials ScienceMaterials EngineeringElectrical EngineeringSemiconductor DeviceEngineering +12

Impact of titanium addition on film characteristics of HfO2 gate dielectrics deposited by atomic layer deposition

Dina H. Triyoso, R. I. Hegde, Stefan Zollner, +11

Journal of Applied Physics

EngineeringSolid-state ChemistryHfo2 FilmsAnnealed Hafnium DioxideEpitaxial Growth +16

Challenges for the integration of metal gate electrodes

J. Schaeffer, C. Capasso, L. R. C. Fonseca, +19

Materials ScienceElectrical EngineeringMetal Gate ElectrodesEngineeringElectromigration Technique +12

Film properties of ALD HfO2 and La2O3 gate dielectrics grown on Si with various pre-deposition treatments

Dina H. Triyoso, R. I. Hegde, Jennifer E. Grant, +12

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

EngineeringVarious Pre-deposition TreatmentsSilicon On InsulatorSemiconductor DeviceChemical Engineering +14