V. Dhandapani

Fermi-Level Pinning at the Polysilicon/Metal Oxide Interface—Part I

C. C. Hobbs, L. R. C. Fonseca, A. A. Knizhnik et al. · IEEE Transactions on Electron Devices · 2004 · 224 citations

Electrical Engineering, Engineering, Physics +13

Fermi-Level Pinning at the Polysilicon/Metal–Oxide Interface—Part II

C. C. Hobbs, L. R. C. Fonseca, A. A. Knizhnik et al. · IEEE Transactions on Electron Devices · 2004 · 174 citations

Materials Science, Electrical Engineering, Semiconductor Device +14

Fermi level pinning at the polySi/metal oxide interface

Chris Hobbs, L.M. Fonseca, V. Dhandapani et al. · 2004 · 111 citations

Engineering, Silicon On Insulator, Semiconductor Device +16

Physical and electrical properties of metal gate electrodes on HfO2 gate dielectrics

J. Schaeffer, S. Samavedam, D. C. Gilmer et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2002 · 100 citations

Engineering, Electrical Properties, Gate Dielectric +18

Compatibility of polycrystalline silicon gate deposition with HfO2 and Al2O3/HfO2 gate dielectrics

D. C. Gilmer, R. I. Hegde, R. Cotton et al. · Applied Physics Letters · 2002 · 79 citations

Materials Science, Materials Engineering, Electrical Engineering +14