R. I. Hegde

Fermi-Level Pinning at the Polysilicon/Metal Oxide Interface—Part I

C. C. Hobbs, L. R. C. Fonseca, A. A. Knizhnik et al. · IEEE Transactions on Electron Devices · 2004 · 224 citations

Engineering, Electrical Engineering, Materials Science +17

Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2O3 thin films on Si(100)

Tonya M. Klein, Dongfang Niu, William S. Epling et al. · Applied Physics Letters · 1999 · 203 citations

Natural Sciences, Chemistry, Materials Science +17

Fermi-Level Pinning at the Polysilicon/Metal–Oxide Interface—Part II

C. C. Hobbs, L. R. C. Fonseca, A. A. Knizhnik et al. · IEEE Transactions on Electron Devices · 2004 · 174 citations

Engineering, Electrical Engineering, Materials Science +17

Effects of anneal ambients and Pt thickness on Pt/Ti and Pt/Ti/TiN interfacial reactions

J. O. Olowolafe, Robert E. Jones, A. C. Campbell et al. · Journal of Applied Physics · 1993 · 141 citations

Natural Sciences, Materials Engineering, Materials Science +12

Fermi level pinning at the polySi/metal oxide interface

Chris Hobbs, L.M. Fonseca, V. Dhandapani et al. · 2004 · 111 citations

Engineering, Electrical Engineering, Materials Science +15