W. G. Perry

GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high-temperature monocrystalline AlN buffer layers

T. W. Weeks, M. D. Bremser, K. S. Ailey et al. · Applied Physics Letters · 1995 · 249 citations

Materials Science, Semiconductors, Wide-bandgap Semiconductor +10

Strain effects on excitonic transitions in GaN: Deformation potentials

W. Shan, R. J. Hauenstein, A. J. Fischer et al. · Physical review. B, Condensed matter · 1996 · 164 citations

Materials Engineering, Materials Science, Wide-bandgap Semiconductor +11

Growth, Doping and Characterization of Al_xGa_1−xN Thin Film Alloys on 6H-SiC(0001) Substrates

M. D. Bremser, W. G. Perry, Tsvetanka Zheleva et al. · MRS Internet Journal of Nitride Semiconductor Research · 1996 · 104 citations · Full text

Binding energy for the intrinsic excitons in wurtzite GaN

W. Shan, B. D. Little, A. J. Fischer et al. · Physical review. B, Condensed matter · 1996 · 100 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Intrinsic Free Excitons +12

Correlation of biaxial strains, bound exciton energies, and defect microstructures in gan films grown on AlN/6H-SiC(0001) substrates

W. G. Perry, Tsvetanka Zheleva, M. D. Bremser et al. · Journal of Electronic Materials · 1997 · 81 citations

Materials Science, Aluminium Nitride, Wide-bandgap Semiconductor +7