R. J. Hauenstein

Strain effects on excitonic transitions in GaN: Deformation potentials

R. J. Hauenstein, A. J. Fischer, J. J. Song et al. · Physical review. B, Condensed matter · 1996 · 164 citations

Natural Sciences, Materials Engineering, Materials Science +17

Pressure-dependent photoluminescence study of wurtzite GaN

T. J. Schmidt, R. J. Hauenstein, J. J. Song et al. · Applied Physics Letters · 1995 · 92 citations

Natural Sciences, Materials Engineering, Materials Science +17

Reflection high energy electron diffraction study of nitrogen plasma interactions with a GaAs (100) surface

R. J. Hauenstein, D. A. Collins, Xiu-yuan Cai et al. · Applied Physics Letters · 1995 · 69 citations

Natural Sciences, Materials Science, Physics +17

Schottky-based band lineups for refractory semiconductors

M. W. Wang, J. O. McCaldin, J. Swenberg et al. · Applied Physics Letters · 1995 · 61 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Schottky barrier height measurements of epitaxial NiSi2 on Si

R. J. Hauenstein, T. E. Schlesinger, T. C. McGill et al. · Applied Physics Letters · 1985 · 59 citations

Engineering, Materials Engineering, Materials Science +12