T. J. Schmidt

Temperature dependence of interband transitions in GaN grown by metalorganic chemical vapor deposition

W. Shan, T. J. Schmidt, Xing Yang et al. · Applied Physics Letters · 1995 · 263 citations

Materials Science, Semiconductors, Wide-bandgap Semiconductor +14

Above room temperature near ultraviolet lasing from an optically pumped GaN film grown on sapphire

Xing Yang, T. J. Schmidt, W. Shan et al. · Applied Physics Letters · 1995 · 156 citations

Optical Materials, Engineering, Temperature Dependence +17

Pressure-dependent photoluminescence study of wurtzite GaN

W. Shan, T. J. Schmidt, R. J. Hauenstein et al. · Applied Physics Letters · 1995 · 92 citations

Materials Science, Photoluminescence, Engineering +9

Near-threshold gain mechanisms in GaN thin films in the temperature range of 20–700 K

S. Bidnyk, T. J. Schmidt, B. D. Little et al. · Applied Physics Letters · 1999 · 69 citations

Wide-bandgap Semiconductor, Engineering, Near-threshold Gain Mechanisms +17

Room-temperature stimulated emission in GaN/AlGaN separate confinement heterostructures grown by molecular beam epitaxy

T. J. Schmidt, Xing Yang, W. Shan et al. · Applied Physics Letters · 1996 · 60 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +12