S. Bidnyk

Laser action in GaN pyramids grown on (111) silicon by selective lateral overgrowth

S. Bidnyk, B. D. Little, Y. H. Cho et al. · Applied Physics Letters · 1998 · 77 citations

Optical Materials, Engineering, Pyramid Geometry +18

Near-threshold gain mechanisms in GaN thin films in the temperature range of 20–700 K

S. Bidnyk, T. J. Schmidt, B. D. Little et al. · Applied Physics Letters · 1999 · 69 citations

Wide-bandgap Semiconductor, Engineering, Near-threshold Gain Mechanisms +17

High-temperature stimulated emission in optically pumped InGaN/GaN multiquantum wells

S. Bidnyk, T. J. Schmidt, Y. H. Cho et al. · Applied Physics Letters · 1998 · 58 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +18

Structural and optical characteristics of InxGa1−xN/GaN multiple quantum wells with different In compositions

Yong‐Hwan Kwon, G. H. Gainer, S. Bidnyk et al. · Applied Physics Letters · 1999 · 37 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +13

Mechanism of efficient ultraviolet lasing in GaN/AlGaN separate-confinement heterostructures

S. Bidnyk, J. B. Lam, B. D. Little et al. · Applied Physics Letters · 1999 · 27 citations

Photonics, Photoluminescence, Engineering +14