J. B. Lam

Mechanism of efficient ultraviolet lasing in GaN/AlGaN separate-confinement heterostructures

S. Bidnyk, J. B. Lam, B. D. Little et al. · Applied Physics Letters · 1999 · 27 citations

Photonics, Photoluminescence, Engineering +14

Growth of Submicron AlGaN/GaN/AlGaN Heterostructures by Hydride Vapor Phase Epitaxy (HVPE)

D. Tsvetkov, Yu. Melnik, Albert V. Davydov et al. · physica status solidi (a) · 2001 · 25 citations

Materials Engineering, Materials Science, Electrical Engineering +10

MOCVD growth, stimulated emission and time-resolved PL studies of InGaN/(In)GaN MQWs: well and barrier thickness dependence

S. K. Shee, Young-Kil Kwon, J. B. Lam et al. · Journal of Crystal Growth · 2000 · 23 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +8

Polarization dependence of the excitonic optical Stark effect in GaN

C. K. Choi, J. B. Lam, G. H. Gainer et al. · Physical review. B, Condensed matter · 2002 · 16 citations

Wide-bandgap Semiconductor, Engineering, Magnetic Resonance +16

Effect of the number of wells on optical and structural properties in InGaN quantum well structures grown by metalorganic chemical vapor deposition

Hwan‐Kuk Yuh, Euijoon Yoon, S. K. Shee et al. · Journal of Applied Physics · 2002 · 13 citations

Materials Science, Ii-vi Semiconductor, Structural Properties +14