MOCVD growth, stimulated emission and time-resolved PL studies of InGaN/(In)GaN MQWs: well and barrier thickness dependence - Concepedia

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MOCVD growth, stimulated emission and time-resolved PL studies of InGaN/(In)GaN MQWs: well and barrier thickness dependence

23

Citations

9

References

2000

Year

S. K. Shee, Young-Kil Kwon, J. B. Lam, G. H. Gainer, G.H Park, Sung‐Ho Hwang, B. D. Little, J. J. Song

Journal of Crystal Growth

Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringEngineeringMocvd GrowthApplied PhysicsAluminum Gallium NitrideGan Power DeviceGan MqwsBarrier Thickness DependenceOptoelectronics

References

	Year	Citations

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