Yu. Melnik

Cathodoluminescence and Transmission Electron Microscopy Study of the Influence of Crystal Defects on Optical Transitions in GaN

G. Salviati, M. Albrecht, C. Zanotti-Fregonara et al. · physica status solidi (a) · 1999 · 87 citations

Engineering, Materials Engineering, Materials Science +17

Insulating GaN:Zn layers grown by hydride vapor phase epitaxy on SiC substrates

N.I. Kuznetsov, A. E. Nikolaev, A. S. Zubrilov et al. · Applied Physics Letters · 1999 · 63 citations

Engineering, Electrical Engineering, Materials Science +17

Physical Properties of Bulk GaN Crystals Grown by HVPE

Yu. Melnik, Konstantin Vassilevski, A.I. Babanin et al. · MRS Internet Journal of Nitride Semiconductor Research · 1997 · 56 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Depth dependence of defect density and stress in GaN grown on SiC

N. N. Faleev, H. Temkin, Iftikhar Ahmad et al. · Journal of Applied Physics · 2005 · 33 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Properties of Free-Standing GaN Bulk Crystals Grown by HVPE

Yu. Melnik, A. E. Nikolaev, Konstantin Vassilevski et al. · MRS Proceedings · 1997 · 33 citations

Engineering, Materials Engineering, Materials Science +12