A.I. Babanin

Physical Properties of Bulk GaN Crystals Grown by HVPE

Yu. Melnik, Konstantin Vassilevski, A.I. Babanin et al. · MRS Internet Journal of Nitride Semiconductor Research · 1997 · 56 citations · Full text

Engineering, Materials Engineering, Materials Science +17

The influence of temperature treatment on the formation of Ni-based Schottky diodes and ohmic contacts to n-6H-SiC

M. G. Rastegaeva, A. N. Andreev, Alexander Petrov et al. · Materials Science and Engineering B · 1997 · 55 citations

Engineering, Electrical Engineering, Materials Science +16

Structural and electrical properties of Schottky barriers on n-GaN

Elena Kalinina, N.I. Kuznetsov, A.I. Babanin et al. · Diamond and Related Materials · 1997 · 25 citations

Engineering, Materials Engineering, Materials Science +14

Fabrication of GaN mesa structures

Konstantin Vassilevski, M. G. Rastegaeva, A.I. Babanin et al. · MRS Internet Journal of Nitride Semiconductor Research · 1996 · 24 citations · Full text

Engineering, Materials Engineering, Materials Science +16

Electrical characteristics and structural properties of ohmic contacts to p-type 4H-SiC epitaxial layers

K. V. Vasilevskiı̆, S. Rendakova, I. P. Nikitina et al. · Semiconductors · 1999 · 13 citations

Engineering, Electrical Engineering, Materials Science +17