M. G. Rastegaeva

The influence of temperature treatment on the formation of Ni-based Schottky diodes and ohmic contacts to n-6H-SiC

M. G. Rastegaeva, A. N. Andreev, Alexander Petrov et al. · Materials Science and Engineering B · 1997 · 55 citations

Engineering, Electrical Engineering, Materials Science +16

Fabrication of GaN mesa structures

Konstantin Vassilevski, M. G. Rastegaeva, A.I. Babanin et al. · MRS Internet Journal of Nitride Semiconductor Research · 1996 · 24 citations · Full text

Engineering, Materials Engineering, Materials Science +16

Effect of boron diffusion on the high-voltage behavior of 6H-SiC <i>p</i>+<i>nn</i>+ structures

S. Ortolland, Christophe Raynaud, J.P. Chante et al. · Journal of Applied Physics · 1996 · 22 citations · Full text

Engineering, Materials Science, Physics +17

Allowing for current spreading in semiconductors during measurements of the contact resistivity of ohmic contacts

A. N. Andreev, M. G. Rastegaeva, V. P. Rastegaev et al. · Semiconductors · 1998 · 20 citations

Engineering, Electrical Engineering, Physics +16

Influence of proton irradiation on recombination current in 6H–SiC pn structures

Anatoly M. Strel’chuk, V. V. Kozlovski, N.S. Savkina et al. · Materials Science and Engineering B · 1999 · 18 citations

Engineering, Materials Engineering, Materials Science +12