V. V. Kozlovski

Doping of <i>n</i>-type 6H–SiC and 4H–SiC with defects created with a proton beam

A. А. Lebedev, A. I. Veı̆nger, D. V. Davydov et al. · Journal of Applied Physics · 2000 · 105 citations

Materials Engineering, Semiconductors, Electrical Engineering +12

Radiation hardness of wide-gap semiconductors (using the example of silicon carbide)

A. А. Lebedev, V. V. Kozlovski, N. B. Strokan et al. · Semiconductors · 2002 · 40 citations

Similarities and distinctions of defect production by fast electron and proton irradiation: Moderately doped silicon and silicon carbide of n-type

V. V. Emtsev, V. V. Kozlovski, A. А. Lebedev et al. · Semiconductors · 2012 · 40 citations

Impact of high energy electron irradiation on high voltage Ni/4H-SiC Schottky diodes

V. V. Kozlovski, A. А. Lebedev, M. E. Levinshteĭn et al. · Applied Physics Letters · 2017 · 34 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +10

Model for conductivity compensation of moderately doped n- and p-4H-SiC by high-energy electron bombardment

V. V. Kozlovski, A. А. Lebedev · Journal of Applied Physics · 2015 · 31 citations

Semiconductor Technology, Electrical Engineering, Semiconductor Device +14