V. V. Emtsev

Similarities and distinctions of defect production by fast electron and proton irradiation: Moderately doped silicon and silicon carbide of n-type

V. V. Emtsev, V. V. Kozlovski, A. А. Lebedev et al. · Semiconductors · 2012 · 40 citations

Radiation-induced defects in Czochralski-grown silicon containing carbon and germanium

C. A. Londos, A. Andrianakis, V. V. Emtsev et al. · Semiconductor Science and Technology · 2009 · 38 citations

Materials Science, Semiconductors, Engineering +13

Mg-Doped Hexagonal InN/Al2O3 Films Grown by MBE

V. V. Mamutin, V. A. Vekshin, V. Yu. Davydov et al. · physica status solidi (a) · 1999 · 33 citations

Materials Science, Materials Engineering, Inn Crystal Quality +11

Radiation-induced defects in n-type GaN and InN

V. V. Emtsev, V. Yu. Davydov, E. E. Häller et al. · Physica B Condensed Matter · 2001 · 31 citations

Physics, Applied Physics, Gan Power Device +2

Radiation effects on the behavior of carbon and oxygen impurities and the role of Ge in Czochralski grown Si upon annealing

C. A. Londos, A. Andrianakis, V. V. Emtsev et al. · Journal of Applied Physics · 2009 · 30 citations

Engineering, Crystal Growth Technology, Cm−1 Band +16